1/9 may 2001 STD3NB30 n-channel 300v - 1.8 w - 3.2a dpak powermesh? mosfet n typical r ds (on) = 1.8 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n add suffix t4 for ordering in tape & reel description using the latest high voltage mesh overlay? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprieraty edge termi- nation structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drivers absolute maximum ratings (?)pulse width limited by safe operating area (1)i sd 3.2a, di/dt 100a/s, v dd v (br)dss , t j t jmax. type v dss r ds(on) i d STD3NB30 300 v < 2 w 3.2 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 300 v v dgr drain-gate voltage (r gs = 20 k w ) 300 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 3.2 a i d drain current (continuos) at t c = 100c 2a i dm ( l ) drain current (pulsed) 12.8 a p tot total dissipation at t c = 25c 45 w derating factor 0.36 w/c dv/dt(1) peak diode recovery voltage slope 4 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c 1 3 dpak internal schematic diagram
STD3NB30 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 2.77 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3.2 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 190 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 300 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 2.5 a 1.8 2 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 2.5 a 2.1 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 260 pf c oss output capacitance 56 pf c rss reverse transfer capacitance 7pf
3/9 STD3NB30 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 150v, i d = 2.5 a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 9ns t r rise time 9 ns q g total gate charge v dd = 240v, i d = 5 a, v gs = 10v 12 16 nc q gs gate-source charge 7.5 nc q gd gate-drain charge 3 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 240v, i d = 5 a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 10 ns t f fall time 7 ns t c cross-over time 15 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 3.2 a i sdm (2) source-drain current (pulsed) 12.8 a v sd (1) forward on voltage i sd = 3.2 a, v gs = 0 1.5 v t rr reverse recovery time i sd = 5 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 180 ns q rr reverse recovery charge 800 nc i rrm reverse recovery current 9 a thermal impedance safe operating area
STD3NB30 4/9 tranfer characteristics capacitance variations output characteristics tranconductance gate charge vs gate-source voltage static drain-source on resistance
5/9 STD3NB30 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
STD3NB30 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load
7/9 STD3NB30 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STD3NB30 8/9 tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
9/9 STD3NB30 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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